发明名称 |
SENSING CIRCUIT |
摘要 |
A circuit includes a degeneration p-channel metal-oxide-semiconductor (PMOS) transistor, a load PMOS transistor, and a clamp transistor configured to clamp a voltage applied to a resistance based memory element during a sensing operation. A gate of the load PMOS transistor is controlled by an output of an operational amplifier. |
申请公布号 |
EP2727112(A1) |
申请公布日期 |
2014.05.07 |
申请号 |
EP20120738300 |
申请日期 |
2012.07.01 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
JUNG, SEONG-OOK;KIM, JISU;RYU, KYUNGHO;KANG, SEUNG H. |
分类号 |
G11C7/06;G11C7/12;G11C11/16;G11C11/4091;G11C16/26 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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