| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of suppressing malfunction.SOLUTION: According to an embodiment, there is provided a nonvolatile memory device including a magnetic memory element and a control unit. The magnetic memory element includes first and second laminated sections. The first laminated section includes a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer. The magnetizing direction of the second ferromagnetic layer is variable. The second laminated section includes a third ferromagnetic layer and a nonmagnetic tunnel barrier layer. The magnetizing direction of the third ferromagnetic layer is variable. The control unit performs a first operation to set the magnetic memory element to a first state. The first operation includes a first preliminary operation for applying a first pulse voltage having a first rising time period to the magnetic memory element, and a first setting operation for applying a second pulse voltage having a second rising time period which is longer than the first rising time period to the magnetic memory element after the first preliminary operation. |
