发明名称 SEMICONDUCTOR STRUCTURE FOR EMITTING LIGHT, AND METHOD FOR MANUFACTURING SUCH A STRUCTURE
摘要 <p>A semiconductor structure for emitting light including a substrate made of a first semi-conductor material having a first type of conductivity, a first electrical contact, a second semiconductor material, having a second type of conductivity to form a junction, a second electrical contact contacting the second semiconductor material, a polarizer configured to polarize at least one portion of the semiconductor structure, and a plurality of micro- or nano-structures each including a first end connected to the substrate. Each micro- or nano-structure includes at least one portion made from the second semiconductor material, or each micro- or nano-structure having the first type of conductivity, a second end contacting the second semiconductor material to form the junction.</p>
申请公布号 EP2715808(A1) 申请公布日期 2014.04.09
申请号 EP20120726070 申请日期 2012.05.29
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 ROBIN, IVAN-CHRISTOPHE
分类号 H01L33/06;H01L33/38 主分类号 H01L33/06
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