SUBSTRATE COMPRISING A LAYER OF SILICON AND/OR GERMANIUM AND ONE OR A PLURALITY OF OBJECTS OF VARYING SHAPES

摘要

The present invention concerns a substrate comprising a continuous or discontinuous layer of silicon and/or germanium consisting of one or a plurality of monocrystalline grains, and on said layer, one or a plurality of objects of varying shapes consisting of materials which require substrates having a crystalline orientation (111) suitable for the epitaxial growth of same. The invention also concerns a method for producing such a substrate.