发明名称 |
High power ultraviolet light sources and method of fabricating the same |
摘要 |
A vertically conducting LED comprising, in a layered arrangement: a highly thermally conductive submount wherein the highly conductive submount has a thermal conductivity of at least 100 W/m0K; a p-type layer comprising Al1-x-yInyGax N wherein 0≰x≰1 and 0≰y≰1; a quantum well layer comprising Al1-x-yInyGaxN wherein 0≰x≰1 and 0≰y≰1; an n-type layer comprising Al1-x-yInyGaxN wherein 0≰x≰1 and 0≰y≰1; and an n-type contact layer wherein the LED has a peak emission at 200-365 nm. |
申请公布号 |
US8680551(B1) |
申请公布日期 |
2014.03.25 |
申请号 |
US201113070174 |
申请日期 |
2011.03.23 |
申请人 |
ADIVARAHAN VINOD;FAREED QHALID;KHAN ASIF;NITEK, INC. |
发明人 |
ADIVARAHAN VINOD;FAREED QHALID;KHAN ASIF |
分类号 |
H01L33/60 |
主分类号 |
H01L33/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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