| 摘要 |
Provided is a method for driving a non-volatile memory element in which a variable resistance element including a first electrode, a second electrode, and a variable resistance layer capable of reversibly changing between a high resistance state and a low resistance state with application of electrical signals having different polarities is connected in series with a current steering element having bidirectional rectifying characteristics with respect to an applied voltage. After the non-volatile memory element is manufactured, the resistance value of the variable resistance layer is reduced from a resistance value in the initial resistance state higher than that in the high resistance state by applying, to the non-volatile memory element, a voltage pulse having the polarity identical to that of the voltage pulse for changing the variable resistance layer from the low resistance state to the high resistance state in the normal operations. |
