| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide semiconductor device that enables rapid growth of a silicon carbide semiconductor film.SOLUTION: A method for producing a silicon carbide semiconductor device comprises: S5 of introducing gas containing Si, gas containing C and gas containing Cl in a reaction furnace; S6 (a first step) of growing an SiC epitaxial film on a 4H-SiC substrate by a CVD process in a gas atmosphere consisting of the raw material gas introduced in the step S5, added gas, doping gas and carrier gas; and a second step of gradually reducing the introduction amount ratio of the gas containing Cl to the gas containing Si in the gas atmosphere. At the beginning of the first step, the number of Cl atoms in the gas containing Cl in the gas atmosphere is 3 times of the number of Si atoms in the gas containing Si. In the second step, the number of Cl atoms in the gas containing Cl in the gas atmosphere to the number of Si atoms in the gas containing Si is reduced at the rate of 0.5% per minute to 1.0% per minute. |
