| 摘要 |
1,156,904. Electroluminescence. SIEMENS A.G. 23 Feb., 1967 [24 Feb., 1966], No. 8663/67. Heading C4S. [Also in Division H1] A luminescent diode in which the emitted light intensity varies with temperature within a certain range at a rate of less than 1% per ‹C. is made by alloying a pellet containing acceptor material and tin to an N-type A III B v , e.g. gallium arsenide, body. In the embodiment the alloy contains tin and zinc in the weight ratio 10-100 : 1 and produces a diode with a substantially zero temperature coefficient at room temperature. The tin is stated to alter the semi-conductor band structure at the junction by occupying A III lattice sites. |
