发明名称 |
Semiconductor device and method for manufacturing semiconductor device |
摘要 |
A semiconductor device includes an insulation film formed above a semiconductor substrate, a conductor containing Cu formed in the insulation film, and a layer film formed between the insulation film and the conductor and formed of a first metal film containing Ti and a second metal film different from the first metal film, a layer containing Ti and Si is formed on the surface of the conductor. |
申请公布号 |
US8669177(B2) |
申请公布日期 |
2014.03.11 |
申请号 |
US20090366020 |
申请日期 |
2009.02.05 |
申请人 |
KOUNO TAKAHIRO;AKIYAMA SHINICHI;WATATANI HIROFUMI;OWADA TAMOTSU;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
KOUNO TAKAHIRO;AKIYAMA SHINICHI;WATATANI HIROFUMI;OWADA TAMOTSU |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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