| 摘要 |
This organic thin-film transistor, wherein a compound represented by general formula (1) is used in a semiconductor active layer, has high carrier mobility and negligible threshold voltage change after repeated driving. (R1 to R10 represent a hydrogen atom or a substituent. At least one of R1 to R4 and R6 to R9 represent a substituent represented by general formula (W). In general formula (W), two or more of R1 to R4 and R6 to R9 represent a substituent represented by general formula (W) when L is a divalent linking group represented by (L-1) alone. L represents a specific divalent linking group. R represents a substituted or unsubstituted alkyl group with two or more carbon atoms, an oligooxyethylene group with two or more repeating oxyethylene units, or an oligosiloxane group or a substituted or unsubstituted trialkylsilyl group with two or more silicon atoms.) |
