| 摘要 |
The present invention relates to a system and a method of manufacturing a carbon layer. The embodiment includes a step of depositing a first metal layer on a substrate having a carbon layer. A silicide is epitaxial-grown on a substrate. An epitaxial-grown silicide is to form a carbon layer on a silicide layer. In the embodiment, the carbon layer is made of graphene. A semiconductor substrate can be moved to perform an additional process for forming a channel in the graphene. |
