| 摘要 |
A CMOS image sensor is disclosed. The CMOS image sensor includes a photodiode area generating and accumulating a charge corresponding to incident light by being formed in a P conductivity type semiconductor board and an OFD active area formed in the P conductivity type semiconductor board to be separated from the photodiode area to the side and discharging the excessive charges generated in the photodiode area to the outside. An NPN transistor can be formed in the active photodiode area, the P conductivity type semiconductor board, and the OFD active area. |
