| 发明名称 |
Method of making a semiconductor device having a multicomponent oxide |
| 摘要 |
A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc. |
| 申请公布号 |
US8647031(B2) |
申请公布日期 |
2014.02.11 |
| 申请号 |
US201213455321 |
申请日期 |
2012.04.25 |
| 申请人 |
HOFFMAN RANDY L.;HERMAN GREGORY S.;MARDILOVICH PETER P.;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
HOFFMAN RANDY L.;HERMAN GREGORY S.;MARDILOVICH PETER P. |
| 分类号 |
H01L21/00;H01L29/786 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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