发明名称 Memory semiconductor device and method of operating the same
摘要 In a read step or a program (write) verification step of a semiconductor memory device, read voltages different from one another are applied to a pair of word lines respectively disposed on both sides of a selected word line to suppress the enlargement of program distribution.
申请公布号 US8644064(B2) 申请公布日期 2014.02.04
申请号 US201113107206 申请日期 2011.05.13
申请人 CHO BYUNGKYU;LEE CHANGHYUN;HUR SUNGHOI;SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO BYUNGKYU;LEE CHANGHYUN;HUR SUNGHOI
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
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