发明名称 |
Memory semiconductor device and method of operating the same |
摘要 |
In a read step or a program (write) verification step of a semiconductor memory device, read voltages different from one another are applied to a pair of word lines respectively disposed on both sides of a selected word line to suppress the enlargement of program distribution. |
申请公布号 |
US8644064(B2) |
申请公布日期 |
2014.02.04 |
申请号 |
US201113107206 |
申请日期 |
2011.05.13 |
申请人 |
CHO BYUNGKYU;LEE CHANGHYUN;HUR SUNGHOI;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO BYUNGKYU;LEE CHANGHYUN;HUR SUNGHOI |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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