| 摘要 |
<p>Disclosed is a semiconductor light emitting device to improve luminous efficiency. The present invention comprises an n-type semiconductor layer, a quantum well layer, a barrier layer and a p-type semiconductor layer, wherein the quantum well layer is formed on an upper surface of the n-type semiconductor layer, the barrier layer is formed on an upper surface of the quantum well layer, the p-type semiconductor layer is formed on an upper surface of the barrier layer and more than one p-type delta doping layers is formed on the barrier layer.</p> |
