发明名称 SUBSTRATE, METHOD OF MANUFACTURING SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
摘要 A substrate includes a first insulating layer provided on a base board, a second insulating layer provided on the first insulating layer, a third insulating layer provided on the second insulating layer, a pad electrode provided on the third insulating layer, and a hole formed to penetrate the substrate and reaching the pad electrode. A diameter of the hole in the first insulating layer is larger than a diameter of the hole in the second insulating layer, and the first insulating layer and the second insulating layer are formed using different materials from each other and the second insulating layer and the third insulating layer are formed using different materials from each other.
申请公布号 US2014008816(A1) 申请公布日期 2014.01.09
申请号 US201313929218 申请日期 2013.06.27
申请人 SEIKO EPSON CORPORATION 发明人 YODA TSUYOSHI
分类号 H01L23/48;H01L21/768 主分类号 H01L23/48
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