发明名称 |
EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK |
摘要 |
A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence sigma less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box. |
申请公布号 |
US2014011120(A1) |
申请公布日期 |
2014.01.09 |
申请号 |
US201213542458 |
申请日期 |
2012.07.05 |
申请人 |
LU YEN-CHENG;YU SHINN-SHENG;YEN ANTHONY;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LU YEN-CHENG;YU SHINN-SHENG;YEN ANTHONY |
分类号 |
G03F1/24;G03F7/20 |
主分类号 |
G03F1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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