| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device structure having a through electrode, which does not depend on a gettering effect of a substrate itself.SOLUTION: A semiconductor device comprises: a semiconductor element 3 formed on a first principal surface A of a substrate 1; a protection film 8 which is a silicon nitride-containing protection film formed on a second principal surface B opposite to the first principal surface A of the substrate 1 and which has a silicon composition larger than that of a silicon nitride having a composition of the whole film as a stoichiometric composition; and a through electrode 9 which pierces the substrate 1 in a thickness direction. As the protection film 8, a layered film can be used, in which a polycrystalline silicon film and a silicon nitride film on the polycrystalline silicon film are formed on the side of a silicon-rich silicon nitride film or the substrate. |
