发明名称 |
Semiconductor device having chip crack detection structure |
摘要 |
A device includes a semiconductor substrate, a first penetration electrode and a plurality of second penetration electrodes each penetrating the semiconductor substrate, a first terminal and a plurality of second terminals formed on a one side of the substrate, and a third terminal and a plurality of fourth terminals formed on an opposite side of the substrate. Each of the first and third terminals is vertically aligned with and electrically connected to first penetration electrode. Each of the second terminals is vertically aligned with an associated one of the second penetration electrodes and electrically connected to another one of the second penetration terminals that is not vertically aligned with the associated second terminal. Each of fourth terminals is vertically aligned with and electrically connected to an associated one of the second penetration electrodes. |
申请公布号 |
US8624401(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US201213461627 |
申请日期 |
2012.05.01 |
申请人 |
ISHIKAWA TORU;ELPIDA MEMORY, INC. |
发明人 |
ISHIKAWA TORU |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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