| 发明名称 |
PASSIVATION SCHEME |
| 摘要 |
An integrated circuit includes a substrate and passivation layers. The passivation layers include a bottom dielectric layer formed over the substrate for passivation, a doped dielectric layer formed over the bottom dielectric layer for passivation, and a top dielectric layer formed over the doped dielectric layer for passivation. |
| 申请公布号 |
US2014001607(A1) |
申请公布日期 |
2014.01.02 |
| 申请号 |
US201213539160 |
申请日期 |
2012.06.29 |
| 申请人 |
CHUANG CHENG-CHI;HUANG KUN-MING;HUNG HSUAN-HUI;LIN MING-YI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHUANG CHENG-CHI;HUANG KUN-MING;HUNG HSUAN-HUI;LIN MING-YI |
| 分类号 |
H01L29/02;H01L21/02;H01L21/28 |
主分类号 |
H01L29/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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