发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
摘要 |
In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated. |
申请公布号 |
US2014001154(A1) |
申请公布日期 |
2014.01.02 |
申请号 |
US201213602421 |
申请日期 |
2012.09.04 |
申请人 |
SATO KOHEI;NAKAMOTO KAZUNORI;OMOTO YUTAKA;HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
SATO KOHEI;NAKAMOTO KAZUNORI;OMOTO YUTAKA |
分类号 |
H01L21/3065;C23F1/00;C23F1/08 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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