发明名称 |
SEMICONDUCTOR CHIP WITH EXPANSIVE UNDERBUMP METALLIZATION STRUCTURES |
摘要 |
Methods and apparatus to protect fragile dielectric layers in a semiconductor chip are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first polymer layer over a conductor pad of a semiconductor chip where the conductor pad has a first lateral dimension. An underbump metallization structure is formed on the first polymer layer and in ohmic contact with the conductor pad. The underbump metallization structure has a second lateral dimension greater than the first lateral dimension. A second polymer layer is formed on the first polymer layer with a first opening exposing at least a portion of the underbump metallization structure. |
申请公布号 |
US2013341785(A1) |
申请公布日期 |
2013.12.26 |
申请号 |
US201213530835 |
申请日期 |
2012.06.22 |
申请人 |
FU LEI;ZHANG XUEFENG;CAO LIHONG |
发明人 |
FU LEI;ZHANG XUEFENG;CAO LIHONG |
分类号 |
H01L23/498;H01L21/28;H01L21/50 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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