| 摘要 |
(Objective) A Cu-Mn alloy film demonstrating a high diffusion barrier property is formed. (Solution method) Provided is a Cu-Mn alloy sputtering target material (10), which forms a Cu-Mn alloy film used for a wiring structure of a semiconductor device, including: an element, which is selected from Mn whose concentration is atomic% or more and 12 atomic% or less and from one and more among Ti, Al, Mg, and Ca; and an element whose total concentration is 0.2 atomic% or more and 2 atomic% or less. |
