| 摘要 |
A semiconductor device according to the present invention includes a first conductivity-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10nm - 150nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5nm. A method for manufacturing a semiconductor device according to the present invention includes: a step for forming a Schottky metal, comprising molybdenum and having a thickness of 10nm - 150nm, on the surface of a first conductivity-type SiC semiconductor layer; and a step for heat treating the Schottky metal whilst the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5nm. |
