发明名称 Manufacture of n-type chalcogenide compositions and their uses in photovoltaic devices
摘要 A layer of an n-type chalcogenide compositions including at least cadmium that is provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen. Such n-type chalcogenide compositions are particularly useful in the making of photovoltaic devices.
申请公布号 US8603581(B2) 申请公布日期 2013.12.10
申请号 US20100912205 申请日期 2010.10.26
申请人 BRYDEN TODD R.;LEMON BUFORD I.;GEORGE JOSEPH;FEIST REBEKAH KRISTINE-LIGMAN;DOW GLOBAL TECHNOLOGIES LLC 发明人 BRYDEN TODD R.;LEMON BUFORD I.;GEORGE JOSEPH;FEIST REBEKAH KRISTINE-LIGMAN
分类号 C23C16/40 主分类号 C23C16/40
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