发明名称 |
Manufacture of n-type chalcogenide compositions and their uses in photovoltaic devices |
摘要 |
A layer of an n-type chalcogenide compositions including at least cadmium that is provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen. Such n-type chalcogenide compositions are particularly useful in the making of photovoltaic devices. |
申请公布号 |
US8603581(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US20100912205 |
申请日期 |
2010.10.26 |
申请人 |
BRYDEN TODD R.;LEMON BUFORD I.;GEORGE JOSEPH;FEIST REBEKAH KRISTINE-LIGMAN;DOW GLOBAL TECHNOLOGIES LLC |
发明人 |
BRYDEN TODD R.;LEMON BUFORD I.;GEORGE JOSEPH;FEIST REBEKAH KRISTINE-LIGMAN |
分类号 |
C23C16/40 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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