发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like. |
申请公布号 |
US2013323912(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201313950957 |
申请日期 |
2013.07.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAMURA TOMOKO;SUGIYAMA EIJI;DOZEN YOSHITAKA;DAIRIKI KOJI;TSURUME TAKUYA |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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