发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.
申请公布号 US2013323912(A1) 申请公布日期 2013.12.05
申请号 US201313950957 申请日期 2013.07.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TAMURA TOMOKO;SUGIYAMA EIJI;DOZEN YOSHITAKA;DAIRIKI KOJI;TSURUME TAKUYA
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项
地址