| 摘要 |
<p>The method comprises supplying a reactive component into an evacuated process chamber (2) with a flow of a predefined size, and heating a substrate (3) to a predefined reaction temperature. The process chamber includes a plasma source for generating a directed plasma jet (5). The reactive component is diffusion-activated by the directed plasma jet such that the reactive component diffuses into a boundary region (9) of the substrate at a predefinable diffusion rate. The reactive component is present in a liquid, gaseous, powdery and/or suspension form. The method comprises supplying a reactive component into an evacuated process chamber (2) with a flow of a predefined size, and heating a substrate (3) to a predefined reaction temperature. The evacuated process includes a plasma source for generating a directed plasma jet (5). The reactive component is diffusion-activated by the directed plasma jet such that the reactive component diffuses into a boundary region (9) of the substrate at a predefinable diffusion rate. The reactive component is present in a liquid, gaseous, powdery and/or suspension form, and is injected into the plasma jet for the diffusion activation in the plasma source, injected into the free plasma jet and/or injected into the process chamber. The reactive component reacts with the substrate in the boundary region of the substrate so that a compound is created in the boundary region. The process chamber includes a heat source to be able to carry out the modification at a reaction temperature within a predefined temperature range. The substrate is preheated to the reaction temperature by an additional heat source. The reaction temperature is controlled or regulated by the plasma jet during the modification, and hydrogen is supplied to the process chamber. The reaction temperature of the substrate is set to a value in the range of 800-1200[deg] C. The plasma source and a substrate holder (8) are moved relative to one another. The substrate is held by the substrate holder.</p> |
