| 摘要 |
Provided is a semiconductor device that includes a substrate, a first buffer region formed over the substrate, a second buffer region formed on the first buffer region, an active layer formed on the second buffer region, and at least two electrodes formed on the active layer. The first buffer region includes at least one composite layer in which a first semiconductor layer and a second semiconductor layer are sequentially stacked. The second buffer region in includes at least one composite layer in which a third semiconductor layer, a fourth semiconductor layer, and a fifth semiconductor layer are sequentially stacked. The fourth lattice constant has a value between the third lattice constant and the fifth lattice constant. |
