MASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING SAME

摘要

The present invention provides a method for manufacturing a photomask in which a hard mask film pattern is used as an etching mask so as to etch the phase inversion film which is disposed therebelow. The present invention further provides a mask blank for same and a photo mask using same. According to the present invention, a resist film for patterning a hard mask film can be formed to have a small thickness and the hard mask film pattern having a large etching selection ratio is used as the etching mask so as to etch the phase inversion film, and thus the photo mask can be manufactured in such a manner that optical density is maintained at approximately 3.0 by a light shielding film pattern while the pattern resolution and accuracy can be increased, the loading effect can be reduced, and CD characteristics such as CD uniformity and CD linearity are improved.