发明名称 |
SEMIPOLAR SEMICONDUCTOR AND ITS METHOD OF PRODUCTION |
摘要 |
<p>A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (Al2O3) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.</p> |
申请公布号 |
EP2414567(B1) |
申请公布日期 |
2013.11.20 |
申请号 |
EP20110709883 |
申请日期 |
2011.03.18 |
申请人 |
FREIBERGER COMPOUND MATERIALS GMBH |
发明人 |
WUNDERER, THOMAS;SCHWAIGER, STEPHAN;SCHWAIGER, ILONA;ROESCH, RUDOLPH;LIPSKI, FRANK;SCHOLZ, FERDINAND |
分类号 |
C30B23/02;C30B23/04;C30B25/02;C30B25/04;C30B25/18 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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