| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a p-type aluminum gallium nitride semiconductor using a new material.SOLUTION: The present invention provides a method for fabricating a p-type aluminum gallium nitride semiconductor, which comprises the steps of: disposing a material piece having aluminum carbide on a first face of a substrate; and supplying a gas containing aluminum, a gas containing gallium, and a gas containing nitrogen from a first direction perpendicular to the first face of the substrate, thereby forming an aluminum gallium nitride semiconductor including carbon on the first face of the substrate. |
