发明名称 |
LASER ANNEALING SCANNING METHODS WITH REDUCED ANNEALING NON-UNIFORMITY |
摘要 |
PROBLEM TO BE SOLVED: To provide laser annealing scanning methods that result in reduced annealing non-uniformity in semiconductor device structures under fabrication.SOLUTION: The methods include defining a length of an annealing laser beam such that the tails of the laser beam reside only within scribe lines that separate the semiconductor device structures. The annealing laser beam tails from adjacent scan path segments can overlap or not overlap within the scribe lines. The cross-scan length of the annealing laser beam can be selected to simultaneously scan more than one semiconductor device structure while the annealing laser beam is configured such that the tails do not fall within the semiconductor device structure. |
申请公布号 |
JP2013232639(A) |
申请公布日期 |
2013.11.14 |
申请号 |
JP20130081892 |
申请日期 |
2013.04.10 |
申请人 |
ULTRATECH INC |
发明人 |
ARTHUR W ZAFIROPOULO |
分类号 |
H01L21/268;B23K26/00;B23K26/073;B23K26/08 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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