发明名称 POWER STORAGE DEVICE
摘要 A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
申请公布号 KR20130124337(A) 申请公布日期 2013.11.13
申请号 KR20137016891 申请日期 2011.11.30
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KURIKI KAZUTAKA;INOUE NOBUHIRO;OGINO KIYOFUMI
分类号 H01M4/134;H01G11/06;H01G11/22;H01G11/30;H01G11/38;H01M4/38;H01M4/46;H01M10/05 主分类号 H01M4/134
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