发明名称 METHOD FOR INTEGRATED CIRCUIT DIAGNOSIS
摘要 A method provides a mechanism to examine physical properties and/or diagnose problems at a selected location of an integrated circuit. Such a method can include creating a layer of a reactive material a selected distance above and in proximity with a surface of the integrated circuit so that the reactive material can be evaluated to form chemical radicals above and in proximity to the surface of the integrated circuit. A portion of the reactive material can be excited. A portion of the surface of the integrated circuit can be removed to a selected level to evaluate an exposed electrical structure of the integrated circuit. The exposed electrical structure can be evaluated to determine a potential problem in the integrated circuit.
申请公布号 US2013295700(A1) 申请公布日期 2013.11.07
申请号 US201313935726 申请日期 2013.07.05
申请人 MICRON TECHNOLOGY, INC. 发明人 WILLIAMSON MARK J.;SANDHU GURTEJ S.;ARRINGTON JUSTIN R.
分类号 H01L21/66 主分类号 H01L21/66
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