| 摘要 |
PURPOSE: A production method of silicon carbide powder is provided to produce the beta phase silicon carbide powder with high purity in high yield by minimizing the loss of SiO gas through controlling the generation speed of the SiO gas. CONSTITUTION: A production method of silicon carbide powder comprises the following: a first thermal processing step of carbonizing and reducing a silicon carbide precursor at 1,400-1,600°C (S1); and a second thermal processing step of inducing the crystallization at 1,800-1,900°C (S2). The silicon carbide precursor is a combination of high carbon silica powder obtained by mixing silica and carbon, and more than two polymers selected from siloxane-based polymers and silsesquioxanes group polymers. [Reference numerals] (S1) Step of carbonizing and reducing a starting material at 1,400-1,600°C; (S2) Step of completing the reaction of the mixture of reactant and non-reactant formed in the previous step at 1,800-1,900°C |
