发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for manufacturing a semiconductor device is provided to improve a yield by performing a peeling process and a transferring process. CONSTITUTION: A first light emitting diode includes a first terminal and a second terminal. A first resin layer covers the first light emitting diode. A second resin layer covers a second light emitting diode. An organic compound layer (72) is installed between a first substrate (70) and an element layer (73). The organic compound layer includes a photocatalyst substance (71).
申请公布号 KR20130115187(A) 申请公布日期 2013.10.21
申请号 KR20130108210 申请日期 2013.09.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 JINBO YASUHIRO;MORISUE MASAFUMI;KIMURA HAJIME;YAMAZAKI SHUNPEI
分类号 H01L51/52;G02F1/136;H01L21/336;H01L29/786 主分类号 H01L51/52
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