| 摘要 |
A solar cell stack having multiple semiconductor solar cells of Ge and/or a Ge compound and/or a III-V compound, wherein the solar cell stack has a first solar cell part with a first lattice constant, and the solar cell stack has a second solar cell part with a second lattice constant and wherein the first and second solar cell parts are arranged one on top of the other with frictional engagement and wherein an abrupt difference between the first and second lattice constants is formed between the first and second solar cell parts and the difference between the lattice constants is at least 0.5%, or an amorphous layer is formed, and wherein the first solar cell part and/or the second solar cell part comprises a further semiconductor solar cell and wherein the first solar cell part and/or the second solar cell part comprises a metamorphic intermediate layer, and wherein the metamorphic intermediate layer comprises a first layer thickness and the metamorphic intermediate layer changes the lattice constant by at least 0.5% along the extent of the thickness of the intermediate layer. |
