| 摘要 |
PROBLEM TO BE SOLVED: To attain growth in a lateral direction burying a part between facets with growth of the facets under only growth conditions in a vertical direction.SOLUTION: A method for producing a Group III nitride semiconductor comprises forming mesas on the main surface being the surface of a substrate, and growing a Group III nitride semiconductor in the c-axis direction thereof from the top surfaces of mesas and the bottom surfaces of dents. In the processed side surfaces being side surfaces of the mesas or the dents, the plane most parallel to the processed side surfaces among the low-index planes of growing Group III nitride semiconductor is an m-plane (1-100), and when a projected vector obtained by orthogonally projecting the normal vector of the processed side surface to the main surface is defined as a lateral vector, an angle formed by the lateral vector and a projected vector obtained by orthogonally projecting the normal vector of the m-plane of the growing Group III nitride semiconductor to the main surface, is 0.5° or more and 6° or less. |
