| 发明名称 |
III-nitride wafer fabrication |
| 摘要 |
A method for fabrication of a III-nitride film over a silicon wafer that includes forming control joints to allow for overall stress relief in the III-nitride film during the growth thereof.
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| 申请公布号 |
US8557681(B2) |
申请公布日期 |
2013.10.15 |
| 申请号 |
US20070978409 |
申请日期 |
2007.10.29 |
| 申请人 |
HERMAN THOMAS;BEACH ROBERT;INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
HERMAN THOMAS;BEACH ROBERT |
| 分类号 |
H01L21/00;H01L21/311 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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