发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that can keep a low phase compensation capacitance even if an external load having a high load capacity is connected.SOLUTION: The semiconductor integrated circuit device has an output buffer having a first MOS transistor and a second MOS transistor connected in series between a supply voltage terminal and a ground voltage terminal, and outputting an output current from a first junction of the first and second MOS transistors. The semiconductor integrated circuit device further has a bias voltage generation circuit outputting a bias voltage based on a reference voltage to the first MOS transistor, and a bias adjustment circuit having a phase compensation capacitance and adjusting a gate voltage of the second MOS transistor on the basis of the reference voltage and a voltage of the first junction.
申请公布号 JP2013211681(A) 申请公布日期 2013.10.10
申请号 JP20120080369 申请日期 2012.03.30
申请人 RENESAS ELECTRONICS CORP 发明人 ARAKI MASAHIRO
分类号 H03F3/347;G05F1/618 主分类号 H03F3/347
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