| 摘要 |
PURPOSE: A compound semiconductor device and a manufacturing method thereof suppress a leakage current and obtain a high breakdown voltage by forming a Fe-doped layer between a buffer layer and an electron travel layer. CONSTITUTION: An initial layer (12) is formed on a substrate (11). A buffer layer (13) is formed on the initial layer. A Fe-doped layer (14) is formed on the buffer layer. An electron travel layer (15) is formed on the Fe-doped layer. An electron supply layer (16) is formed on the electron travel layer. A source electrode (17s), a gate electrode (17g), and a drain electrode (17d) are formed on the electron supply layer. [Reference numerals] (10) Composition semiconductor lamination structure; (11) Substrate; (12) Initial layer; (12a) High V/III ratio layer; (12b) Low V/III ratio layer; (13) Buffer layer; (14) Fe-doped layer; (15) Electron travel layer; (16) Electron supply layer; (17d) Drain electrode; (17g) Gate electrode; (17s) Source electrode |
