| 摘要 |
PURPOSE:To enable the formation of various ion beams having minute diameter, by producing an ion beam while employing an alloy then selecting the ion beam of desired metal element. CONSTITUTION:The ions from injecting ion sources 1a, 1c and a self ion work cleaning ion source 1b are collected through lenses 2a, 2b, 2c and guided to a mass spectrograph 3. The mass spectrograph 3 will select the ion beam of required metal element such as As, B, Si from the ion beam of each alloy element. Said selected ion beam is focused through a lens means 4, while being deflection scanned by means of a beam deflection scanning means 5 and projected onto the predetermined position of a wafer arranged in a working chamber 6. |
