| 摘要 |
A silicon carbide substrate (10) having a substrate surface (12B) is prepared. An insulating film (15) is formed to cover a part of the substrate surface (12B). A contact electrode (16) is formed on the substrate surface (12B), so as to be in contact with the insulating film (15). The contact electrode (16) contains Al, Ti, and Si atoms. The contact electrode (16) includes an alloy film (50) made of an alloy containing Al atoms and at least any of Si atoms and Ti atoms. The contact electrode (16) is annealed such that the silicon carbide substrate (10) and the contact electrode (16) establish ohmic connection with each other. Thus, in a case where a contact electrode having Al atoms is employed, insulation reliability of the insulating film can be improved. |
