LIGHT EMITTING DEVICE HAVING NITRIDE-BASED SEMICONDUCTOR OMNIDIRECTIONAL REFLECTOR

摘要

PURPOSE: A light emitting device having a nitride-based semiconductor omnidirectional reflector is provided to improve internal light efficiency by growing a light emitting part in each light emitting chip. CONSTITUTION: A light emitting part (150) is formed on a nitride-based reflector. The nitride-based reflector is made of GaN. The nitride-based reflector includes an undoped nitride semiconductor layer and a high concentration nitride semiconductor layer. The high concentration nitride semiconductor layer is arranged between the undoped nitride semiconductor layers. The high concentration nitride semiconductor layer comprises an air layer (134).