| 摘要 |
An erasable programmable single-poly nonvolatile memory includes a substrate structure; a floating gate transistor having a floating gate, a gate oxide layer under the floating gate, and a channel region, wherein the channel region is formed in a N-well region; and an erase gate region, wherein the floating gate is extended to and is adjacent to the erase gate region and the erase gate region comprises a n-type source/drain region connected to an erase line voltage and a P-well region. The N-well and P-well region are formed in the substrate structure. The gate oxide layer comprises a first portion above the channel region of the floating gate transistor and a second portion above the erase gate region, and a thickness of the first portion of the gate oxide layer is different from a thickness of the second portion of the gate oxide layer.
|
