| 摘要 |
FIELD: physics.SUBSTANCE: method of making a lead selenide-based semiconductor structure, having a substrate and a lead selenide film, involves forming a polycrystalline lead selenide film and subsequent heat treatment thereof in an oxygen-containing medium, wherein according to the invention, the polycrystalline lead selenide film is formed on a substrate made from material having a temperature coefficient of linear expansion ranging from 10·10°Cto 26·10°C.EFFECT: invention enables to form lead selenide-based photosensitive and emitting structures.6 cl, 3 ex, 3 dwg |
