发明名称 METHOD OF CONTROLLED INFLUENCE ON BIOLOGICAL OBJECTS WITH ELECTROMAGNETIC IRRADIATION OF SEMICONDUCTOR INJECTION GENERATOR (VERSIONS)
摘要 FIELD: medicine.SUBSTANCE: group of inventions relates to medicine, namely to means of impact with electromagnetic radiation on biological object by electromagnetic irradiation and can be used in field of medicine, biology, veterinary for carrying out wave therapy. In accordance with the first version of the invention claimed is method, which includes radiation of biological objects by electromagnetic irradiation of semiconductor injection generator. Radiation is performed by means of semiconductor injection generator based on ABheterostructure. To perform suppressing impact on oncologic cells radiation is carried out by polarised pulse electromagnetic irradiation with rotation of electromagnetic irradiation vector rightward, frequency of electromagnetic irradiation in the range from 30 to 220 GHz, wavelength of electromagnetic irradiation from 1.4 to 10 mm, power of electromagnetic irradiation from 10W/cmto 10W/cmfor 6-8 minutes. Electromagnetic irradiation is performed by active layer which is placed between located on one side two grown layers of n-type conductivity and on the other side one grown layer of p-type conductivity, on which contact sites from precious electrically conductive metal, preferably gold or platinum, are made. As dopant of n-type Se, Te or Si with concentration of carriers not less than n- 8?10cm, and as dopant of p-type Be, Zn or Cd with concentration of carriers not less than P- 9?10cmare used. In accordance with the second version of the invention, method includes radiation of biological objects by electromagnetic irradiation of semiconductor injection generator. Radiation is performed by means of semiconductor injection generator based on ABheterostructure, and for stimulating impact on oncologic cells radiation is performed by polarised pulse electromagnetic irradiation with rotation of electromagnetic irradiation vector rightward. Electromagnetic irradiation is performed by active layer which is placed between located on one side two grown layers of n-type conductivity and on the other side one grown layer of p-type conductivity, on which contact sites from precious electrically conductive metal, preferably gold or platinum, are made. As dopant of n-type Se, Te or Si with concentration of carriers not less than n- 8?10cm, and as dopant of p-type Be, Zn or Cd with concentration of carriers not less than P- 9?10cm are used.EFFECT: group of inventions makes it possible to perform controlled impact on cells of biological object, in particular people, with providing both suppressing and stimulating influence.2 cl, 5 dwg
申请公布号 RU2491971(C1) 申请公布日期 2013.09.10
申请号 RU20120122579 申请日期 2012.06.01
申请人 STEPANENKO VLADIMIR DMITRIEVICH;STEPANENKO KIRILL VLADIMIROVICH;KUZNETSOV ANDREJ NIKOLAEVICH 发明人 STEPANENKO VLADIMIR DMITRIEVICH;STEPANENKO KIRILL VLADIMIROVICH;KUZNETSOV ANDREJ NIKOLAEVICH
分类号 A61N1/06 主分类号 A61N1/06
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