发明名称 |
Circuit controlling HS-NMOS power switches with slew-rate limitation |
摘要 |
The present document relates to NMOS switches. In particular, the present document relates to a method and system for limiting the slew rate of the output voltage of one or more high side (HS) NMOS power switches. A circuit arrangement configured to control a first NMOS switch is described. The arrangement (120) comprises voltage provisioning means (121) configured to supply a gate voltage to a gate terminal (102) of the first NMOS switch (100); current provisioning means (121) configured to provide a current; a first control stage (130) configured to provide and/or remove a connection between the gate terminal (102) of the first NMOS switch (100) and the voltage provisioning means (121), thereby switching the first NMOS switch (100) to an on-state and/or an off-state, respectively; and a first feedback control link (122, 140) between an output terminal (103) of the first NMOS switch (100) and the current provisioning means (121) configured to control the slew-rate of a voltage at the first output terminal (102). |
申请公布号 |
EP2426820(B1) |
申请公布日期 |
2013.09.04 |
申请号 |
EP20100175672 |
申请日期 |
2010.09.07 |
申请人 |
DIALOG SEMICONDUCTOR GMBH |
发明人 |
BRAUER, MICHAEL;DREBINGER, STEPHAN |
分类号 |
H03K17/00 |
主分类号 |
H03K17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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