发明名称
摘要 <P>PROBLEM TO BE SOLVED: To increase productivity by suppressing occlusion of pipings located downstream of a reactor caused by silicon powders or polymer compounds contained in exhaust gas of the reactor so as to extend time between overhauls. <P>SOLUTION: In a manufacturing apparatus of polycrystal silicon, a plurality of silicon core rods are heated inside the reactor so as to induce deposition of polycrystal silicon on their surface by reaction of a raw material gas. Here, a gas outlet 7 for discharging the exhaust gas after the reaction is formed at a bottom part of the reactor, an exhaust gas pipe 21 that communicates with the exterior is connected to the gas outlet 7, and a sleeve 22 is removably installed inside the exhaust gas pipe 21 so as to cover the inner circumferential surface of the gas outlet 7 and the exhaust gas pipe 21. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP5262086(B2) 申请公布日期 2013.08.14
申请号 JP20070307446 申请日期 2007.11.28
申请人 发明人
分类号 C01B33/02 主分类号 C01B33/02
代理机构 代理人
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