| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin-film transistor insulating layer material capable of forming an organic thin-film transistor insulating layer having high resistance to a metal vapor used in a sputtering method.SOLUTION: The organic thin-film transistor insulating layer material contains: a polymer compound (A) including a repeating unit containing a cyclic ether structure, and a repeating unit containing an organic group which generates a phenolic hydroxyl group by the action of an acid; and an organosilsesquioxane compound (B) having at least one group selected from a group consisting of a phenolic hydroxyl group and a cyclic ether group. |
